Hall Measurement System

The HMS-3000 includes software with I-V curve capability for checking the ohmic integrity of the user made sample contacts. The systems can be used to characterize various materials including semiconductors and compound semiconductors (N Type & P Type) such as Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, TCOs, metals, etc., at both 300K and 77K (room temperature and liquid nitrogen temperature).

Features

• Low and high resistivity measurement capability, bulk and sheet carrier concentration and mobility, Hall coefficient in semiconductors

• DC measurement modes

• van der Pauw and Hall Bar measurements

• Board system (room temperature or 77K)

Specifications:

General

• Maximum sample size (Small board) – 6mm x 6mm, (Large Board/Spring Clip Board) – 20mm x 20mm.

• Measurement Temperature: 300K (room temperature), 77K (Liquid Nitrogen)

• Cool-down time: 10sec.

• Measurement Material: All semiconductors including Si, SiGe, SiC, GaAs, InGaAs, InP, GaN (N Type & P Type can be measured).
  Data input of depth enables comprehensive measurement of the whole material.

• Resistivity Range of HMS-3000: 10-4 to 107 (Ohms-cm)

• Magnet: Permanent magnet (diameter: 50mm)

• Magnet Flux Density: 0.51 Tesla nominal +/-1% of marked value (Optional 1 Tesla sample kit for 300K testing only)

• Stability: 2% over 1 years

• Uniformity: +/- 1% over 20mm diameter from center

• Pole Gap: 26 mm

• Hall voltage range: 1uV to 2000mV

• Mobility: (cm2/Volt-sec) 1 ~ 107 (including low temperature)

• Density (cm-3): 107 ~ 1021

• Standard field strength 0.51 Tesla, Optional field strengths 0.27T, 0.31T, 0.37T, 1.0 Tesla (300K testing only).

• Size (W × D × H): 320 x 300 x 105 mm (Constant Current Supply System)

• Weight: 7.7kg (without shipping packaging)

• Packed in overseas wooden crate, Weight: 18.5 Kg, Dimensions: 23″ x 18″ x 19″